SK hynix Products
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- DDR3 SDRAM
- DDR2 SDRAM
- GDDR5 SDRAM
- Raw NAND
SK hynix Recent News
SK Hynix announced that it has developed 16Gb (Gigabits) DDR5 (Double Data Rate 5) DRAM, the industry’s first DDR5 to meet the JEDEC standards. The same 1Ynm process technology used for the recently-developed 1Ynm 8Gb DDR4 DRAM was applied to the new DRAM, giving an industry-leading competitive edge for the Company.
DDR5 is a next-generation DRAM standard that offers ultra-high speed and high density with reduced power consumption as compared to DDR4, for use in data-intensive applications such as big data, artificial intelligence, and machine learning.
SK Hynix successfully lowered the operating voltage from 1.2V to 1.1V, achieving 30% lower power consumption compared to the previous generation, DDR4 DRAM. The new 16Gb DDR5 DRAM supports a data transfer rate of 5200Mbps, about 60% faster compared to 3200Mbps of the previous generation, with which it can process 41.6GB (Gigabytes) of data—11 full-HD video files (3.7GB each)—per second.
The Company provided a major chipset maker with RDIMM (Registered Dual In-line Memory Module) and UDIMM (Unbuffered DIMM) for server and PC platforms, with more memory banks—doubled from 16 to 32 banks—in accordance with the JEDEC DDR5 standards.
“Based on technological advancements that allowed the industry’s first DDR5 DRAM to meet the JEDEC standards, SK Hynix plans to begin mass producing the product from 2020, when the DDR5 market is expected to open, to actively respond to the demands of clients,” said vice president Joohwan Cho, the Head of Volume Product Design Group.
According to IDC, a market research institute, demand for DDR5 is expected to rise from 2020, accounting for 25% of the total DRAM market in 2021 and 44% in 2022.
SK Hynix Inc. announced that the Company recently completed developing an enterprise SATA Solid State Drive (or ‘eSSD’). With its 72-Layer 512Gb (Gigabits) 3D NAND Flash chips, the Company is paving the way for its full-fledged entrance to the high value-added eSSD market.
SK Hynix combined the 72-Layer 512Gb 3D NAND Flash with its in-house firmware and controller to provide the maximum density of 4TB (Terabytes). SK Hynix makes the most of its 72-Layer 512Gb 3D NAND chips to double the biggest density of the SSD of the same size with 256Gb NAND chips.
A single 4TB SSD could contain 200 UHD (Ultra-HD) movies, each of which is generally as large as approximately 20GB (Gigabytes). The new eSSD supports sequential read and write speed of up to 560MB/s (Megabytes per second) and 515MB/s, respectively, and it can perform 98,000 random read IOPS (Input/Output operations per second) and 32,000 random write IOPS. SK Hynix also improved the read latency, which is of the utmost importance in eSSD performance. The Company is sampling the product to server and data center clients in the United States.
The Company also finished developing enterprise PCIe (PCI Express) SSD and is shipping samples to server and data center clients. The PCIe SSD will also use the 72-Layer 3D NAND and have a capacity of more than 1TB. The 1TB PCIe SSD operates at 2,700MB/s and 1,100MB/s of sequential read/write speed and runs random read/write performance of 230,000 IOPS and 35,000 IOPS.
“SK Hynix started mass-producing Client SSD with its 3D NAND chips and in-house firmware and controller last year. Now we have expanded our SSD business portfolio with the development of eSSD,” said Jin Kang, the Head of NAND Planning and Enabling. “The Company plans to actively meet growing eSSD market demands to contribute to enhancing its profitability in NAND Flash business” he added.
According to IHS Markit, the SSD market revenue is expected to total USD 25.1 billion in 2017 and post a continuous annual growth of 5.6% to total 31.2 billion in 2021. Especially, the revenue of the enterprise SSD will lead the market growth by rising from USD 13.4 billion to 17.6 billon at a CAGR of 7% during the same period.
SK Hynix announced it has launched the world’s first highest density of 8GB(Gigabytes) LPDDR4X mobile DRAM using its state of the art dual channel 16Gb chips. SK Hynix has been planning to mass produce the product for upcoming flagship smartphones equipped with 8GB mobile DRAM. 8GB is the highest density in the LPDDR4X standard, which has 20% of superiority in power efficiency to current LPDDR4.
Data I/Os run at ultra-low voltage of 0.6V in the LPDDR4X compared to 1.1V in LPDDR4, having better power efficiency accordingly. The 8GB LPDDR4X processes 34.1GB of data per second with 64-bit I/O. Furthermore, the package size is the smallest ever (12mm*12.7mm), which is scaled down by more than 30% compared to an 8GB LPDDR4 with the thickness thinner than 1mm. The Company expects the product to be installed in a variety of mobile devices and optimize user conveniences with the virtue of the efficiency in battery use, the high performance, and the compactness.
According to IHS Markit, average density in high end smart phones is to be 3.5GB this year and 6.9GB in 2020 with CAGR bigger than 25%. Plus, demand for 8GB mobile DRAM starts to be generated in this year and will occupy the biggest share in the high end smart phones.
SK hynix P/N
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